nte347 silicon npn transistor rf power output p o = 3w @ 175mhz description: the nte347 is designed for 13.6 volt, vhf large signal power amplifier applications required in mili- tary and industrial equipment operating to 240mhz. features: low lead inductance stripline package for easier design and increased broadband capability. balanced emitter construction for increased safe operating area. the nte347 is designed to withstand an open or shorted load at rated output power. specified 13.6 volt, 175mhz characteristics ? output power = 3.0 watts minimum gain = 8.2db efficiency = 50% absolute maximum ratings: (t a = +25 c unless otherwise specified) collector ? emitter voltage, v ceo 18v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector ? base voltage, v cb 36v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . emitter ? base voltage, v eb 4.0v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . continuous collector current, i c 0.6a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total device dissipation (t a = +25 c), p d 15w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate above 25 c 86mw/ c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature range, t j ? 65 to +200 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ? 65 to +200 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . electrical characteristics : (t a = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics collector ? emitter breakdown voltage v (br)ceo i c = 200ma, i b = 0 18 ? ? v collector ? emitter breakdown voltage v (br)ces i c = 200ma, i b = 0 36 ? ? v emitter ? base breakdown voltage v (br)cbo i e = 1.0ma, i c = 0 4.0 ? ? v collector cutoff current v (br)cbo v cb = 15v, i e = 0 ? ? 1.0 ma on characteristics dc current gain h fe i c = 100ma, v ce = 5.0vdc 5.0 ? ? ? dynamic characteristics output capacitance c ob v cb = 15v, i e = 0, f = 0.1 to 1.0 mhz ? 15 30 pf
electrical characteristics (cont?d) : (t a = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit functional test power input p in p out = 3w, v ce = 13.6v, f 175mhz ? 0.35 0.45 w common ? emitter amplifier power gain g pe f = 175mhz 8.2 ? ? db collector efficiency 50 ? ? % 1.065 (27.08) max .530 (13.46) .220 (5.58) .305 (7.75) .030 (.762) .090 (2.28) .005 (0.15) .375 (9.52) dia .260 (6.60) .075 (1.94) .325 (8.28) dia 8 ? 32 nc ? 3a wrench flat .115 (2.92) .730 (18.54) c e e b
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